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STGD10HF60KD
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STGD10HF60KD Overview
This device utilizes the advanced PowerMESH process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies.
Features
- Designed for automotive applications and AEC-Q101 qualified
- Low on-voltage drop (VCE(sat))
- Low Cres/ Cies ratio (no cross conduction susceptibility)
- Switching losses include diode recovery energy
- Short-circuit rated
- Very soft Ultrafast recovery anti-parallel diode
Product Parameters
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prmis_id
CP260510
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item_name
STGD10HF60KD
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p_445
No
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p_1387
-
p_4418
-
parent_id
PF244743
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p_4906
true
-
p_5113
5
-
p_163
Active
Technical Documents
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
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STGD10HF60KD | STMicroelectronics | Trans IGBT Chip N-CH 600V 18A 62.5mW Automotive 3-Pin(2+Tab) DPAK T/R |
2500---$0.9117 |
![]() |
STGD10HF60KD | STMicroelectronics | IGBT 600V 10A DPAK |
1---$2.3600 10---$2.1240 100---$1.7076 500---$1.4029 1000---$1.1624 |
![]() |
STGD10HF60KD | STMicroelectronics | IGBT Transistors Automotive-grade 10 A, 600 V short-circuit rugged IGBT Ultrafast diode |
1---$2.3600 10---$2.1300 25---$2.0100 100---$1.7100 500---$1.4100 1000---$1.2200 2500---$1.2100 |
![]() |
STGD10HF60KD | STMicroelectronics |
2500---$1.0900 |
|
![]() |
STGD10HF60KD | STMicroelectronics | Transistor, Igbt, 600V, 18A, To-252 Rohs Compliant: Yes |Stmicroelectronics STGD10HF60KD |
1---$2.4800 10---$2.2300 25---$2.0800 50---$1.9400 100---$1.7900 250---$1.6300 500---$1.4700 1000---$1.3900 |
![]() |
STGD10HF60KD | STMicroelectronics | Trans IGBT Chip N-CH 600V 18A 3-Pin DPAK T/R - Tape and Reel (Alt: STGD10HF60KD) |
2500---$1.1231 5000---$1.1004 10000---$1.0777 15000---$1.0550 20000---$1.0324 25000---$1.0097 250000---$0.9870 |
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