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STGD19N40LZ
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STGD19N40LZ Overview
This application-specific IGBT utilizes the most advanced PowerMESH technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
Features
- AEC-Q101 qualified
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
Product Parameters
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prmis_id
CP352156
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item_name
STGD19N40LZ
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p_445
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p_1387
1.8634
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p_4418
1000
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parent_id
PF258478
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p_4906
false
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p_5113
0
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p_163
Active
Technical Documents
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AN484 Car ignition with IGBTsDetails>>
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
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STGD19N40LZ | STMicroelectronics | Trans IGBT Chip N-CH 365V 25A 125mW Automotive 3-Pin(2+Tab) DPAK T/R |
2500---$0.9671 |
![]() |
STGD19N40LZ | STMicroelectronics | IGBT 20V 40A DPAK |
2500---$1.2088 |
![]() |
STGD19N40LZ | STMicroelectronics | IGBT Transistors Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
2500---$1.2800 |
![]() |
STGD19N40LZ | STMicroelectronics | STGD19N40LZ Series 390 V 25 A Automotive-Grade Internally Clamped IGBT - DPAK-3 |
2500---$1.2100 |
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STGD19N40LZ | STMicroelectronics | Igbt |Stmicroelectronics STGD19N40LZ |
2500---$1.2300 |
![]() |
STGD19N40LZ | STMicroelectronics | Trans IGBT Chip N-CH 425V 25A 3-Pin DPAK T/R - Tape and Reel (Alt: STGD19N40LZ) |
2500---$1.1968 5000---$1.1726 10000---$1.1484 15000---$1.1242 20000---$1.1000 25000---$1.0759 250000---$1.0517 |
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