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STH315N10F7-6
  • STH315N10F7-6

Request Information For STH315N10F7-6

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STH315N10F7-6 Overview

The STH315N10F7-6 is an N-channel Power MOSFET that features STripFET F7 technology with an improved trench gate structure. 

Technology: Utilizes STripFET F7 technology with an advanced trench gate structure.

Low On-State Resistance (RDS(on): This MOSFET has very low on-state resistance, which is beneficial for minimizing power losses and improving efficiency in electronic circuits.

Reduced Internal Capacitance: The enhanced trench gate structure also helps reduce internal capacitance, which is advantageous for faster switching and decreased power dissipation.

Low Gate Charge: By reducing gate charge, this MOSFET enables more efficient switching, further enhancing its performance in various applications.

STH315N10F7-6

Features

AEC-Q101 Qualified: This qualification indicates that the component meets specific automotive-grade standards, making it suitable for use in automotive applications.

Low RDS(on): It boasts one of the lowest on-state resistances available in the market, ensuring efficient power handling.

Excellent Figure of Merit (FoM): The FoM is a measure of a device's overall performance, and this MOSFET is noted for its excellent FoM, which is a sign of its superior performance.

Low Crss/Ciss Ratio: The low ratio of Crss (reverse transfer capacitance) to Ciss (input capacitance) is advantageous for electromagnetic interference (EMI) immunity, reducing the likelihood of interference in nearby circuits.

High Avalanche Ruggedness: This feature indicates that the MOSFET can withstand high-energy spikes or surges without breaking down, which is crucial for reliability in certain applications.

Applications

Overall, the STH315N10F7-6 is designed for applications where high-performance N-channel Power MOSFETs with low resistance, fast switching, and robust characteristics are required, particularly in automotive and power electronics.

Product Parameters

  • Product Name

    STH315N10F7-6

  • Manufacturer

    STMicroelectronics

  • Continuous Drain Current (ID)

    65A

  • Package / Case

    TO-220

  • Product Type

    Power MOSFET

  • Voltage Rating (VDS)

    100V

  • RDS(ON)

    7.2 milliohms

  • Packaging

    Tube

Other distributor's price

Distributor Part # Mfg. Description Price
arrow STH315N10F7-6 STMicroelectronics Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) H2PAK T/R

1000---$2.9230

digikey STH315N10F7-6 STMicroelectronics MOSFET N-CH 100V 180A H2PAK-6

1000---$3.2236

mouser STH315N10F7-6 STMicroelectronics MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ 180 A STripFET F7 Power MOSFET in

1---$6.3800

10---$5.7500

25---$5.4300

100---$4.7100

500---$4.0100

1000---$3.5000

future STH315N10F7-6 STMicroelectronics STH315N10F7 Series 100 V 180 A 2.3 mOhm N-Ch STripFET™ F7 Power Mosfet - H PAK-6

1000---$3.9800

newark STH315N10F7-6 STMicroelectronics Lv Mosfet Trench |Stmicroelectronics STH315N10F7-6

1000---$3.2200

avnet STH315N10F7-6 STMicroelectronics Trans MOSFET N-CH 100V 180A 7-Pin H2PAK T/R - Tape and Reel (Alt: STH315N10F7-6)

1000---$4.0569

2000---$3.8376

4000---$3.6183

6000---$3.3990

8000---$3.1797