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STH315N10F7-6
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STH315N10F7-6 Overview
The STH315N10F7-6 is an N-channel Power MOSFET that features STripFET F7 technology with an improved trench gate structure.
Technology: Utilizes STripFET F7 technology with an advanced trench gate structure.
Low On-State Resistance (RDS(on): This MOSFET has very low on-state resistance, which is beneficial for minimizing power losses and improving efficiency in electronic circuits.
Reduced Internal Capacitance: The enhanced trench gate structure also helps reduce internal capacitance, which is advantageous for faster switching and decreased power dissipation.
Low Gate Charge: By reducing gate charge, this MOSFET enables more efficient switching, further enhancing its performance in various applications.
Features
AEC-Q101 Qualified: This qualification indicates that the component meets specific automotive-grade standards, making it suitable for use in automotive applications.
Low RDS(on): It boasts one of the lowest on-state resistances available in the market, ensuring efficient power handling.
Excellent Figure of Merit (FoM): The FoM is a measure of a device's overall performance, and this MOSFET is noted for its excellent FoM, which is a sign of its superior performance.
Low Crss/Ciss Ratio: The low ratio of Crss (reverse transfer capacitance) to Ciss (input capacitance) is advantageous for electromagnetic interference (EMI) immunity, reducing the likelihood of interference in nearby circuits.
High Avalanche Ruggedness: This feature indicates that the MOSFET can withstand high-energy spikes or surges without breaking down, which is crucial for reliability in certain applications.
Applications
Overall, the STH315N10F7-6 is designed for applications where high-performance N-channel Power MOSFETs with low resistance, fast switching, and robust characteristics are required, particularly in automotive and power electronics.
Product Parameters
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Product Name
STH315N10F7-6
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Manufacturer
STMicroelectronics
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Continuous Drain Current (ID)
65A
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Package / Case
TO-220
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Product Type
Power MOSFET
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Voltage Rating (VDS)
100V
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RDS(ON)
7.2 milliohms
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Packaging
Tube
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
![]() |
STH315N10F7-6 | STMicroelectronics | Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) H2PAK T/R |
1000---$2.9230 |
![]() |
STH315N10F7-6 | STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-6 |
1000---$3.2236 |
![]() |
STH315N10F7-6 | STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ 180 A STripFET F7 Power MOSFET in |
1---$6.3800 10---$5.7500 25---$5.4300 100---$4.7100 500---$4.0100 1000---$3.5000 |
![]() |
STH315N10F7-6 | STMicroelectronics | STH315N10F7 Series 100 V 180 A 2.3 mOhm N-Ch STripFET™ F7 Power Mosfet - H PAK-6 |
1000---$3.9800 |
![]() |
STH315N10F7-6 | STMicroelectronics | Lv Mosfet Trench |Stmicroelectronics STH315N10F7-6 |
1000---$3.2200 |
![]() |
STH315N10F7-6 | STMicroelectronics | Trans MOSFET N-CH 100V 180A 7-Pin H2PAK T/R - Tape and Reel (Alt: STH315N10F7-6) |
1000---$4.0569 2000---$3.8376 4000---$3.6183 6000---$3.3990 8000---$3.1797 |
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