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STW58N65DM2AG
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STW58N65DM2AG Overview
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Features
- AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Product Parameters
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prmis_id
CP429433
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item_name
STW58N65DM2AG
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p_445
No
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p_1387
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p_4418
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parent_id
PF261349
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p_4906
false
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p_5113
0
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p_163
Active
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
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STW58N65DM2AG | STMicroelectronics | Trans MOSFET N-CH 650V 48A Automotive 3-Pin(3+Tab) TO-247 Tube |
600---$7.3950 |
![]() |
STW58N65DM2AG | STMicroelectronics | MOSFET N-CH 650V 48A TO247 |
1---$11.6700 10---$10.7250 100---$9.0583 500---$8.0580 1000---$7.3911 |
![]() |
STW58N65DM2AG | STMicroelectronics | N Channel 650 V 48 A 360 W 68 mOhm Surface Mount Power Mosfet - TO-247 |
600---$7.9400 |
![]() |
STW58N65DM2AG | STMicroelectronics | MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET |
1---$12.2300 10---$11.2400 25---$10.7700 100---$9.4900 600---$8.4700 |
![]() |
STW58N65DM2AG | STMicroelectronics | Hv Mosfet Mdmesh |Stmicroelectronics STW58N65DM2AG |
1---$12.6000 |
![]() |
STW58N65DM2AG | STMicroelectronics | Trans MOSFET N-CH 650V 48A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW58N65DM2AG) |
600---$7.8595 1200---$7.7007 2400---$7.5420 3600---$7.3832 4800---$7.2244 6000---$7.0656 60000---$6.9068 |
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