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TK55S10N1
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TK55S10N1 Overview
Features
Generation U-MOSⅧ-H
Operating Temperature 175°C (TJ)
Mfr Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss) 100 V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 27.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 10 V
Polarity N-ch
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs(th) (Max) @ Id 4V @ 500µA
FET Type N-Channel
Internal Connection Single
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Power Dissipation (Max) 157W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Application Scope Automotive / Switching Voltage Regulators / Motor Drivers
PPAP Capable(*)
AEC-Q101 Qualified(*)
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
TK55S10N1 | Toshiba America Electronic Components | Trans MOSFET N-CH Si 100V 55A Automotive 3-Pin(2+Tab) DPAK+ T/R |
2000---$1.1496 |
|
TK55S10N1 | Toshiba America Electronic Components | MOSFET N-CH 100V 55A DPAK |
2000---$0.7129 |
|
TK55S10N1 | Toshiba America Electronic Components | MOSFET Power N-Ch 55A DPAK, RL |
500---HK$15.1960 1000---HK$14.9660 |
|
TK55S10N1 | Toshiba America Electronic Components | MOSFET 157W 1MHz Automotive, AEC-Q101 |
1---$1.6700 10---$1.5000 100---$1.1700 500---$0.9680 1000---$0.7640 2000---$0.7120 |
|
TK55S10N1 | Toshiba America Electronic Components | Mosfet, N-Ch, 100V, 55A, To-252 Rohs Compliant: Yes |Toshiba TK55S10N1,LQ(O |
1---$2.0000 10---$1.7600 25---$1.5900 50---$1.4200 100---$1.2400 250---$1.0600 500---$0.9670 1000---$0.9160 |
|
TK55S10N1 | Toshiba America Electronic Components | Trans MOSFET N-CH 100V 55A 3-Pin DPAK - Tape and Reel (Alt: TK55S10N1,LQ) |
2000---$1.7723 4000---$1.6765 8000---$1.5807 12000---$1.4849 16000---$1.3891 |
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