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  • TK65S04K3L

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TK65S04K3L Overview

Mounting Style: SMD/SMT
Pd - Power Dissipation: 88 W
Package / Case: DPAK-3 (TO-252-3)
Number of Channels: 1 Channel
Configuration: Single
Transistor Type: 1 N-Channel
Rds On - Drain-Source Resistance: 4.5 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 65 A
Packaging: Reel
Transistor Polarity: N-Channel
Manufacturer: Toshiba


MOSFET Type: N-Channel MOSFET (N-Ch MOS).
Continuous Drain Current (Id): 65A. This is the maximum continuous current that can flow through the MOSFET.
Drain to Source Voltage (Vdss): 40V. This is the maximum voltage the MOSFET can handle.
Power Dissipation (Pd): 88W. This is the maximum power the component can dissipate without damage.
Input Capacitance (Ciss): 2800pF. This is the input capacitance of the MOSFET, which is a measure of how much charge the gate terminal can hold.
Gate Threshold Voltage (Vgs(th)): 0.0045V. This is the gate-source voltage at which the MOSFET starts conducting.

Other distributor's price

Distributor Part # Mfg. Description Price
digikey TK65S04K3L Toshiba America Electronic Components MOSFET N-CH 40V 65A DPAK


mouser TK65S04K3L Toshiba America Electronic Components MOSFET N-Ch MOS 65A 40V 88W 2800pF 0.0045