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TK65S04K3L
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TK65S04K3L Overview
Mounting Style: SMD/SMT
Pd - Power Dissipation: 88 W
Package / Case: DPAK-3 (TO-252-3)
Number of Channels: 1 Channel
Configuration: Single
Transistor Type: 1 N-Channel
Rds On - Drain-Source Resistance: 4.5 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 65 A
Packaging: Reel
Transistor Polarity: N-Channel
Manufacturer: Toshiba
Features
MOSFET Type: N-Channel MOSFET (N-Ch MOS).
Continuous Drain Current (Id): 65A. This is the maximum continuous current that can flow through the MOSFET.
Drain to Source Voltage (Vdss): 40V. This is the maximum voltage the MOSFET can handle.
Power Dissipation (Pd): 88W. This is the maximum power the component can dissipate without damage.
Input Capacitance (Ciss): 2800pF. This is the input capacitance of the MOSFET, which is a measure of how much charge the gate terminal can hold.
Gate Threshold Voltage (Vgs(th)): 0.0045V. This is the gate-source voltage at which the MOSFET starts conducting.
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
![]() |
TK65S04K3L | Toshiba America Electronic Components | MOSFET N-CH 40V 65A DPAK |
2000---$0.7020 |
![]() |
TK65S04K3L | Toshiba America Electronic Components | MOSFET N-Ch MOS 65A 40V 88W 2800pF 0.0045 |
2000---$0.7370 4000---$0.7090 10000---$0.6910 |
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