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TK80S06K3L
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TK80S06K3L Overview
The TK80S06K3L is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for power switching applications in various industrial systems. It is manufactured by Toshiba Electronic Devices & Storage Corporation.
Features
IGBT Configuration: N-channel
Voltage Rating: 600V
Current Rating: 80A
Low saturation voltage for reduced power losses
Fast switching speed for improved efficiency
Built-in temperature monitoring and protection features
Isolated module design for easy integration
Low-inductance module construction for reduced electromagnetic interference (EMI)
Suitable for high-power industrial applications
Package: Module with screw terminals
Applications
Motor drives
Industrial inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating systems
High-power switching converters
Renewable energy systems (solar, wind)
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
![]() |
TK80S06K3L | Toshiba America Electronic Components | MOSFET N-CH 60V 80A DPAK |
2000---$0.8438 |
![]() |
TK80S06K3L | Toshiba America Electronic Components | MOSFET N-Ch MOS 80A 60V 100W 4200pF 0.0055 |
2000---$0.8850 4000---$0.8530 |
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