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VNS3NV04DP-E
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VNS3NV04DP-E Overview
The VNS3NV04DP-E is a specific part number associated with a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics.
Features
Part Number: VNS3NV04DP-E
Manufacturer: STMicroelectronics
Electrical Characteristics (Typical):
Drain-Source Voltage (V<sub>DSS</sub>): 40V
Continuous Drain Current (I<sub>D</sub>): 3A
On-State Resistance (R<sub>DS(ON)</sub>): 0.14 ohms (max)
Gate Threshold Voltage (V<sub>GS(TH)</sub>): 1.5V (max)
Total Gate Charge (Q<sub>G</sub>): 3.5nC
Gate-Source Voltage (V<sub>GS</sub>): ±20V
Power Dissipation (P<sub>D</sub>): 1.7W
Features:
Enhancement Mode: This MOSFET operates in the enhancement mode, meaning it is normally off and requires a positive gate voltage to turn it on.
Low On-State Resistance: The low R<sub>DS(ON)</sub> value indicates low conduction losses when the MOSFET is in the on-state.
High Drain-Source Voltage: The V<sub>DSS</sub> of 40V allows for the handling of relatively high voltage levels.
Gate-Source Voltage: The MOSFET can tolerate gate-source voltages up to ±20V.
Package:
The specific package type (DPAK) is commonly associated with this MOSFET. DPAK (TO-252) is a surface-mount package with three leads.
Product Parameters
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Product Name
VNS3NV04DP-E
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Voltage Rating
40V
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On-State Resistance (Rds(on))
0.060 ohms
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Total Gate Charge (Qg)
3 nC (typ)
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Package
DPAK (TO-252-3)
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Product Type
N-Channel Power MOSFET
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Continuous Drain Current
3A
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Gate Threshold Voltage (Vgs(th))
1V (max)
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Operating Temperature Range
-40°C to 150°C
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RoHS Compliant
Yes
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
![]() |
VNS3NV04DP-E | STMicroelectronics | IC PWR DRIVER N-CHANNEL 1:1 8SO |
1---$1.7700 10---$1.5900 25---$1.5000 100---$1.1700 |
![]() |
VNS3NV04DP-E | STMicroelectronics | Gate Drivers OMNIFET II VIPower 35mOhm 12A 40V |
1---$2.5600 10---$2.3100 25---$2.1800 100---$1.8600 250---$1.7500 500---$1.5300 1000---$1.3200 2500---$1.3100 |
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