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IPB80N06S2L07ATMA3
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IPB80N06S2L07ATMA3 Overview
N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche testedFeatures
- Benefits
- world's lowest RDS at 55V (on) in planar technology
- highest current capability
- lowest switching and conduction power losses for highest thermal efficiency
- robust packages with superior quality and reliability
- Optimized total gate charge enables smaller driver output stages
Applications
- Valves control
- Solenoids control
- Lighting
- Single-ended motors
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
IPB80N06S2L07ATMA3 | Rochester Electronics LLC | MOSFET N-CH 55V 80A TO263-3 |
1000---$1.7063 |
|
IPB80N06S2L07ATMA3 | Infineon Technologies AG | MOSFET MOSFET_)40V 60V) |
1---$3.5900 10---$2.8400 100---$2.6400 250---$2.4500 500---$2.2500 1000---$1.8500 |
|
IPB80N06S2L07ATMA3 | Infineon Technologies AG | Mosfet, Aec-Q101, N-Ch, 55V, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.0053Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power Rohs Compliant: Yes |Infineon IPB80N06S2L07ATMA3 |
1---$3.5200 10---$3.1600 25---$2.9700 50---$2.7800 100---$2.5900 250---$2.4000 500---$2.2100 |
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