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IPG20N06S4L11ATMA1
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IPG20N06S4L11ATMA1 Overview
Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche testedFeatures
- Dual N-channel Logic Level - Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
- Benefits
- Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.
- Bond wire is 200um for up to 20A current
- Larger source lead frame connection for wire bonding
- Package: PG-TDSON-8-4
- Same thermal and electrical performance as a DPAK with the same die size.
- Exposed pad provides excellent thermal transfer (varies by die size)
- Two N-Channel MOSFETs in one package with 2 isolated leadframes
Applications
- Direct Fuel Injection
- ABS Valves
- Solenoid control
- Load Switches
- LED and Body lighting
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
IPG20N06S4L11ATMA1 | Infineon Technologies AG | MOSFET 2N-CH 8TDSON |
5000---$0.7844 |
|
IPG20N06S4L11ATMA1 | Infineon Technologies AG | IPG20N06S4L Series 60 V 11.2 mOhm OptiMOS™-T2 Power-Transistor - PG-TDSON-8-4 |
5000---$1.0800 |
|
IPG20N06S4L11ATMA1 | Infineon Technologies AG | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 |
1---$1.9800 10---$1.7400 100---$1.4300 250---$1.4000 500---$1.1700 1000---$0.9800 5000---$0.9040 |
|
IPG20N06S4L11ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 60V, 20A, 175Deg C, 65W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:20A, Continuous Drain Current Id P Channel:20A Rohs Compliant: Yes |Infineon IPG20N06S4L11ATMA1 |
1---$1.9400 10---$1.7400 25---$1.6300 50---$1.5200 100---$1.4000 250---$1.2800 500---$1.1500 1000---$0.9590 |
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