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M95256-DRMN3TP/K

  • M95256-DRMN3TP/K

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M95256-DRMN3TP/K Overview

The M95256-A125 and M95256-A145 are 256-Kbit serial EEPROM Automotive grade devices operating up to 145°C. They are compliant with the very high level of reliability defined by the Automotive standard AEC-Q100 grade 0.

The devices are accessed by a simple serial SPI compatible interface running up to 20 MHz.

The memory array is based on advanced true EEPROM technology (Electrically Erasable PROgrammable Memory). The M95256-A125 and M95256-A145 are byte-alterable memories (32768 × 8 bits) organized as 512 pages of 64 byte in which the data integrity is significantly improved with an embedded Error Correction Code logic.

The M95256-A125 and M95256-A145 offer an additional Identification Page (64 byte) in which the ST device identification can be read. This page can also be used to store sensitive application parameters which can be later permanently locked in read-only mode.

M95256-DRMN3TP/K

Features

  • Compatible with the Serial Peripheral Interface (SPI) bus
  • Memory array
  • 256 Kbit (32 Kbyte) of EEPROM
  • Page size: 64 byte
  • Write protection by block: 1/4, 1/2 or whole memory
  • Additional Write lockable Page (Identification page)
  • 256 Kbit (32 Kbyte) of EEPROM
  • Page size: 64 byte
  • Write protection by block: 1/4, 1/2 or whole memory
  • Additional Write lockable Page (Identification page)
  • Extended temperature and voltage ranges
  • Up to 125 °C (VCCfrom 1.7 V to 5.5 V)
  • Up to 145 °C (VCCfrom 2.5 V to 5.5 V)
  • Up to 125 °C (VCCfrom 1.7 V to 5.5 V)
  • Up to 145 °C (VCCfrom 2.5 V to 5.5 V)
  • High speed clock frequency
  • 20 MHz for VCC ≥ 4.5 V
  • 10 MHz for VCC≥ 2.5 V
  • 5 MHz for VCC≥ 1.7 V
  • 20 MHz for VCC ≥ 4.5 V
  • 10 MHz for VCC≥ 2.5 V
  • 5 MHz for VCC≥ 1.7 V
  • Schmitt trigger inputs for noise filtering
  • Short Write cycle time
  • Byte Write within 4 ms
  • Page Write within 4 ms
  • Byte Write within 4 ms
  • Page Write within 4 ms
  • Write cycle endurance
  • 4 million Write cycles at 25 °C
  • 1.2 million Write cycles at 85 °C
  • 600 k Write cycles at 125 °C
  • 400 k Write cycles at 145 °C
  • 4 million Write cycles at 25 °C
  • 1.2 million Write cycles at 85 °C
  • 600 k Write cycles at 125 °C
  • 400 k Write cycles at 145 °C
  • Data retention
  • 50 years at 125 °C
  • 100 years at 25 °C
  • 50 years at 125 °C
  • 100 years at 25 °C
  • ESD Protection (Human Body Model)
  • 4000 V
  • 4000 V
  • Packages
  • RoHS-compliant and halogen-free (ECOPACK2 )
  • RoHS-compliant and halogen-free (ECOPACK2 )

Product Parameters

  • prmis_id

    CP308954

  • item_name

    M95256-DRMN3TP/K

  • p_445

    No

  • p_1387

    0.6

  • p_4418

    1000

  • parent_id

    PF253406

  • p_4906

    false

  • p_5113

    0

  • p_163

    Active

Technical Documents

  • Electric vehicle (EV) ecosystemDetails>>

  • AN2014 How a designer can make the most of STMicroelectronics Serial EEPROMsDetails>>

  • AN2440 Embedded ECC in F8H process automotive EEPROM: device architecture and related application guidelinesDetails>>

  • AN4434 CMOS F8H automotive EEPROM cycling endurance and data retentionDetails>>

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