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NP100P06PDG-E1-AY
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NP100P06PDG-E1-AY Overview
The NP100P06PDG is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high current switching applications.
Features
Super low on-state resistance:
RDS(on)1 = 6.0 mΩ MAX. (VGS = -10 V, ID = -50 A)
RDS(on)2 = 7.8 mΩ MAX. (VGS = -4.5 V, ID = -50 A)
These values indicate the resistance when the transistor is in its "on" state. Lower resistance values mean that the MOSFET can conduct current with minimal voltage drop, which is advantageous for high-current applications.
High current rating:
ID(DC) = ±100 A
This MOSFET can handle a continuous (DC) current of up to ±100 A. This makes it suitable for applications that require the switching and control of high currents.
The combination of low on-state resistance and a high current rating makes the NP100P06PDG well-suited for applications where efficient power switching and control are critical, such as in power management, motor control, and high-current switching circuits.
Technical Documents
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
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NP100P06PDG-E1-AY | Renesas Electronics Corporation | MOSFET LOW VOLTAGE POWER MOSFET |
1---$4.4800 10---$4.0300 100---$3.3000 500---$2.8100 |
![]() |
NP100P06PDG-E1-AY | Renesas Electronics Corporation | NP100P06PDG P-Channel 60 V 7.8 mOhm 200 W 300 nC Switching MosFet - TO-263 |
800---$2.0800 1600---$2.0200 |
![]() |
NP100P06PDG-E1-AY | Renesas Electronics Corporation | Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R - Rail/Tube (Alt: NP100P06PDG-E1-AY) |
1---$2.1510 100---$2.0324 1000---$2.0001 |
![]() |
NP100P06PDG-E1-AY | Renesas Electronics Corporation | MOSFET P-CH 60V 100A TO263 |
800---$2.8115 |
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