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  • NP100P06PDG-E1-AY

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NP100P06PDG-E1-AY Overview

The NP100P06PDG is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high current switching applications. 


Super low on-state resistance:

RDS(on)1 = 6.0 mΩ MAX. (VGS = -10 V, ID = -50 A)
RDS(on)2 = 7.8 mΩ MAX. (VGS = -4.5 V, ID = -50 A)
These values indicate the resistance when the transistor is in its "on" state. Lower resistance values mean that the MOSFET can conduct current with minimal voltage drop, which is advantageous for high-current applications.

High current rating:

ID(DC) = ±100 A
This MOSFET can handle a continuous (DC) current of up to ±100 A. This makes it suitable for applications that require the switching and control of high currents.

The combination of low on-state resistance and a high current rating makes the NP100P06PDG well-suited for applications where efficient power switching and control are critical, such as in power management, motor control, and high-current switching circuits.

Technical Documents

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