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NP100P06PDG-E1-AY
  • NP100P06PDG-E1-AY

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NP100P06PDG-E1-AY Overview

The NP100P06PDG is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high current switching applications. 

Features

Super low on-state resistance:

RDS(on)1 = 6.0 mΩ MAX. (VGS = -10 V, ID = -50 A)
RDS(on)2 = 7.8 mΩ MAX. (VGS = -4.5 V, ID = -50 A)
These values indicate the resistance when the transistor is in its "on" state. Lower resistance values mean that the MOSFET can conduct current with minimal voltage drop, which is advantageous for high-current applications.

High current rating:

ID(DC) = ±100 A
This MOSFET can handle a continuous (DC) current of up to ±100 A. This makes it suitable for applications that require the switching and control of high currents.

The combination of low on-state resistance and a high current rating makes the NP100P06PDG well-suited for applications where efficient power switching and control are critical, such as in power management, motor control, and high-current switching circuits.

Technical Documents

Other distributor's price

Distributor Part # Mfg. Description Price
mouser NP100P06PDG-E1-AY Renesas Electronics Corporation MOSFET LOW VOLTAGE POWER MOSFET

1---$4.4800

10---$4.0300

100---$3.3000

500---$2.8100

future NP100P06PDG-E1-AY Renesas Electronics Corporation NP100P06PDG P-Channel 60 V 7.8 mOhm 200 W 300 nC Switching MosFet - TO-263

800---$2.0800

1600---$2.0200

avnet NP100P06PDG-E1-AY Renesas Electronics Corporation Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R - Rail/Tube (Alt: NP100P06PDG-E1-AY)

1---$2.1510

100---$2.0324

1000---$2.0001

digikey NP100P06PDG-E1-AY Renesas Electronics Corporation MOSFET P-CH 60V 100A TO263

800---$2.8115