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NP100P06PDG-E2-AY
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NP100P06PDG-E2-AY Overview
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.Features
- Super low on-state resistance R
- DS(on)1
- GS
- D
- DS(on)2
- GS
- D
- High current rating: I
- D(DC)
Technical Documents
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
NP100P06PDG-E2-AY | Renesas Electronics Corporation | NP100P06PDG P-Channel 60 V 7.8 mOhm 200 W 300 nC Switching MosFet - TO-263 |
800---$2.0800 1600---$2.0200 |
|
NP100P06PDG-E2-AY | Renesas Electronics Corporation | MOSFET LOW VOLTAGE POWER MOSFET |
1---$4.4800 10---$4.0300 100---$3.3000 500---$2.8100 |
|
NP100P06PDG-E2-AY | Renesas Electronics Corporation | Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R - Rail/Tube (Alt: NP100P06PDG-E1-AY) |
1---$2.1510 100---$2.0324 1000---$2.0001 |
|
NP100P06PDG-E2-AY | Renesas Electronics Corporation | MOSFET P-CH 60V 100A TO263 |
800---$2.8115 |
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