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NP100P06PDG-E2-AY

  • NP100P06PDG-E2-AY

Request Information For NP100P06PDG-E2-AY

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NP100P06PDG-E2-AY Overview

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance R
  • DS(on)1
  • GS
  • D
  • DS(on)2
  • GS
  • D
  • High current rating: I
  • D(DC)

Technical Documents

Related Products

Other distributor's price

Distributor Part # Mfg. Description Price
future NP100P06PDG-E2-AY Renesas Electronics Corporation NP100P06PDG P-Channel 60 V 7.8 mOhm 200 W 300 nC Switching MosFet - TO-263

800---$2.0800

1600---$2.0200
mouser NP100P06PDG-E2-AY Renesas Electronics Corporation MOSFET LOW VOLTAGE POWER MOSFET

1---$4.4800

10---$4.0300

100---$3.3000

500---$2.8100
avnet NP100P06PDG-E2-AY Renesas Electronics Corporation Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) TO-263 T/R - Rail/Tube (Alt: NP100P06PDG-E1-AY)

1---$2.1510

100---$2.0324

1000---$2.0001
digikey NP100P06PDG-E2-AY Renesas Electronics Corporation MOSFET P-CH 60V 100A TO263

800---$2.8115

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