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STGB20NB41LZT4
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STGB20NB41LZT4 Overview
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
Features
- HIGH VOLTAGE CLAMPING FEATURE
- POLYSILICON GATE VOLTAGE DRIVEN
- LOW ON-VOLTAGE DROP
- LOW THRESHOLD VOLTAGE
- HIGH CURRENT CAPABILITY
- LOW GATE CHARGE
Product Parameters
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prmis_id
CP56000
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item_name
STGB20NB41LZT4
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p_445
No
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p_1387
3.1896
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p_4418
1000
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parent_id
PF67284
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p_4906
false
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p_5113
0
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p_163
Active
Technical Documents
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AN484 Car ignition with IGBTsDetails>>
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
STGB20NB41LZT4 | STMicroelectronics | IGBT 442V 40A 200W D2PAK |
1---$3.8700 10---$3.4800 100---$2.8512 500---$2.4272 |
|
STGB20NB41LZT4 | STMicroelectronics | Trans IGBT Chip N-CH 382V 40A 200mW Automotive 3-Pin(2+Tab) D2PAK T/R |
1000---$1.9660 |
|
STGB20NB41LZT4 | STMicroelectronics | N-Channel 442 V 20 A Surface Mount Internally Clamped PowerMESH IGBT-D2PAK |
1---$2.4900 10---$2.3400 40---$2.2600 150---$2.1800 500---$2.0700 |
|
STGB20NB41LZT4 | STMicroelectronics | IGBT Transistors N-Ch Clamped 20 Amp |
1---$3.8700 10---$3.4800 25---$3.2900 100---$2.8600 500---$2.4300 1000---$2.2000 |
|
STGB20NB41LZT4 | STMicroelectronics | Igbt Single Transistor, 40 A, 1.3 V, 200 W, 412 V, To-263, 3 Rohs Compliant: Yes |Stmicroelectronics STGB20NB41LZT4 |
1---$4.0600 10---$3.6500 25---$3.4300 50---$3.2100 100---$2.9900 250---$2.7700 500---$2.5500 |
|
STGB20NB41LZT4 | STMicroelectronics | Trans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STGB20NB41LZT4) |
1000---$2.0484 2000---$2.0070 4000---$1.9656 6000---$1.9243 8000---$1.8829 10000---$1.8415 100000---$1.8001 |
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