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STGYA120M65DF2AG
  • STGYA120M65DF2AG

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STGYA120M65DF2AG Overview

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

STGYA120M65DF2AG

Features

IGBT Type: This IGBT is developed using an advanced proprietary trench gate field-stop structure, which is a technology used to improve its performance.
M Series: It belongs to the M series of IGBTs, designed to strike a balance between inverter system performance and efficiency, with a focus on low-loss and short-circuit functionality.
Positive VCE(sat) Temperature Coefficient: The device has a positive temperature coefficient for VCE(sat), which can be advantageous in certain applications.
Tight Parameter Distribution: This ensures that the parameters of individual devices are closely matched, which is essential for safer paralleling of multiple devices.
Low Thermal Resistance: The device is designed to have low thermal resistance, which helps dissipate heat efficiently.
Short-Circuit Withstand Time: It can withstand a short-circuit condition for 6 microseconds, which is important for the device's reliability and safety.
Antiparallel Diode: The IGBT is equipped with a soft and very fast recovery antiparallel diode, which is often used for freewheeling and protection in switching applications.
Maximum Junction Temperature: The maximum allowable junction temperature (TJ) for this IGBT is 175°C, indicating its thermal robustness.

 

Additional Information:

AEC-Q101 Qualified: This qualification indicates that the device meets automotive industry standards for reliability and quality, making it suitable for automotive applications.

VCE(sat) Value: The saturation voltage (VCE(sat)) is specified as 1.65 V (typical) at a collector current (IC) of 120 A. This parameter is important for understanding the IGBT's on-state voltage drop under specific operating conditions.

Applications

Heating System:

In heating systems, IGBTs can be used to control the power supplied to heating elements. They enable precise and efficient modulation of heating output, ensuring consistent and rapid heating while maintaining energy efficiency.


HV Battery Disconnect and Fire-Off System:

In electric and hybrid vehicles, high-voltage (HV) battery systems need to be managed safely. IGBTs can play a crucial role in disconnecting the battery quickly and safely in emergency situations, such as during a collision or fire. They ensure rapid isolation to prevent potential hazards.


Main Inverter (Electric Traction):

The main inverter is a critical component in electric traction systems used in electric vehicles (EVs) and hybrid electric vehicles (HEVs). IGBTs are commonly used in inverters to convert DC power from the HV battery into AC power to drive the electric motor. They provide precise control over motor speed and torque, contributing to the vehicle's overall performance and efficiency.

Technical Documents

  • Electric vehicle (EV) ecosystemDetails>>

  • AN4544 IGBT datasheet tutorialDetails>>

  • AN4694 EMC design guides for motor control applicationsDetails>>

Other distributor's price

Distributor Part # Mfg. Description Price
arrow STGYA120M65DF2AG STMicroelectronics Trans IGBT Chip N-CH 650V 160A 625mW Automotive 3-Pin(3+Tab) Max247 Tube

600---$7.0410

digikey STGYA120M65DF2AG STMicroelectronics IGBT

1---$13.0600

10---$12.0030

100---$10.1375

500---$9.0180

1000---$8.8010

mouser STGYA120M65DF2AG STMicroelectronics IGBT Transistors Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss

1---$13.0600

10---$12.0100

25---$11.5100

100---$10.1400

600---$9.3900

newark STGYA120M65DF2AG STMicroelectronics Igbt |Stmicroelectronics STGYA120M65DF2AG

1---$13.0600

avnet STGYA120M65DF2AG STMicroelectronics Trench gate field-stop IGBT, M series 650 V, 120 A low loss - Trays (Alt: STGYA120M65DF2AG)

600---$8.7129

1200---$8.5369

2400---$8.3609

3600---$8.1849

4800---$8.0089

6000---$7.8328

60000---$7.6568