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STP76NF75

  • STP76NF75

Request Information For STP76NF75

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STP76NF75 Overview

Subcategory: MOSFETs
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Fall Time: 30 ns
Id - Continuous Drain Current: 80 A
Rise Time: 100 ns
Rds On - Drain-Source Resistance: 11 mOhms
Packaging: Tube
Qualification: AEC-Q101
Manufacturer: STMicroelectronics
Configuration: Single
Typical Turn-Off Delay Time: 66 ns
Number of Channels: 1 Channel
Channel Mode: Enhancement
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 75 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Power Dissipation: 300 W
Pd - Power Dissipation: 300 W
Maximum Operating Temperature: + 175 C
Typical Turn-On Delay Time: 25 ns
Series: STP76NF75
Length: 10.4 mm
Height: 9.15 mm
Transistor Type: 1 N-Channel
Minimum Operating Temperature: - 55 C
Qg - Gate Charge: 160 nC
Mounting Style: Through Hole
Package / Case: TO-220-3

STP76NF75

Features

"Single Feature Size" Strip-Based Process: This MOSFET is manufactured using STMicroelectronics' unique process that utilizes a single feature size strip-based design. This results in high packing density and other benefits.

Low On-Resistance: The MOSFET has low on-resistance, which means it can effectively handle high-current applications with minimal power loss.

Rugged Avalanche Characteristics: This indicates that the MOSFET is designed to handle avalanche breakdown conditions without breaking down or being damaged, making it suitable for applications that require robust performance.

Less Critical Alignment Steps: The manufacturing process requires fewer critical alignment steps, which simplifies production and increases manufacturing reproducibility. This is important for consistent and reliable product quality.

Exceptional dv/dt Capability: The MOSFET can handle rapid changes in voltage (dv/dt) effectively, making it suitable for applications where quick switching or response to voltage changes is necessary.

100% Avalanche Tested: The MOSFET undergoes thorough testing to ensure it can handle avalanche conditions reliably. Avalanche testing is important for applications where the MOSFET may experience voltage spikes or transients.

STP76NF75
STP76NF75

Product Parameters

  • Product Name

    STP76NF75

  • Manufacturer

    STMicroelectronics

  • Continuous Drain Current (ID)

    76A

  • Package / Case

    TO-220

  • Product Type

    Power MOSFET

  • Voltage Rating (VDS)

    75V

  • RDS(ON)

    0.009 ohms

  • Packaging

    Tube

Related Products

Other distributor's price

Distributor Part # Mfg. Description Price
digikey STP76NF75 STMicroelectronics MOSFET N-CH 75V 80A TO220

1---$2.6400

10---$2.3720

100---$1.9066

500---$1.5665

1000---$1.2979

2000---$1.2084

5000---$1.1637
arrow STP76NF75 STMicroelectronics Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube

1000---$1.5589

2000---$1.1845

2500---$1.1727

3000---$1.1610

4000---$1.1494

5000---$1.1390

10000---$1.1275

25000---$1.1164

50000---$1.1053
mouser STP76NF75 STMicroelectronics MOSFET N-channel 75 V .0095 80A STripFet 2

1---$2.7600

10---$2.4800

25---$2.3400

100---$1.9900

500---$1.6400

1000---$1.3600
future STP76NF75 STMicroelectronics N-Channel 75 V 11 mOhm 80 A STripFET™ II Power MOSFET-TO-220

50---$1.3500

200---$1.3100

500---$1.2800

1250---$1.2600

2000---$1.2200
newark STP76NF75 STMicroelectronics Lv Mosfet Planar & Old |Stmicroelectronics STP76NF75

1000---$1.2500
avnet STP76NF75 STMicroelectronics Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP76NF75)

1000---$1.2660

2000---$1.2404

4000---$1.2148

6000---$1.1892

8000---$1.1637

10000---$1.1381

100000---$1.1125

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