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STP76NF75
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STP76NF75 Overview
Subcategory: MOSFETs
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Fall Time: 30 ns
Id - Continuous Drain Current: 80 A
Rise Time: 100 ns
Rds On - Drain-Source Resistance: 11 mOhms
Packaging: Tube
Qualification: AEC-Q101
Manufacturer: STMicroelectronics
Configuration: Single
Typical Turn-Off Delay Time: 66 ns
Number of Channels: 1 Channel
Channel Mode: Enhancement
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 75 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Power Dissipation: 300 W
Pd - Power Dissipation: 300 W
Maximum Operating Temperature: + 175 C
Typical Turn-On Delay Time: 25 ns
Series: STP76NF75
Length: 10.4 mm
Height: 9.15 mm
Transistor Type: 1 N-Channel
Minimum Operating Temperature: - 55 C
Qg - Gate Charge: 160 nC
Mounting Style: Through Hole
Package / Case: TO-220-3
Features
"Single Feature Size" Strip-Based Process: This MOSFET is manufactured using STMicroelectronics' unique process that utilizes a single feature size strip-based design. This results in high packing density and other benefits.
Low On-Resistance: The MOSFET has low on-resistance, which means it can effectively handle high-current applications with minimal power loss.
Rugged Avalanche Characteristics: This indicates that the MOSFET is designed to handle avalanche breakdown conditions without breaking down or being damaged, making it suitable for applications that require robust performance.
Less Critical Alignment Steps: The manufacturing process requires fewer critical alignment steps, which simplifies production and increases manufacturing reproducibility. This is important for consistent and reliable product quality.
Exceptional dv/dt Capability: The MOSFET can handle rapid changes in voltage (dv/dt) effectively, making it suitable for applications where quick switching or response to voltage changes is necessary.
100% Avalanche Tested: The MOSFET undergoes thorough testing to ensure it can handle avalanche conditions reliably. Avalanche testing is important for applications where the MOSFET may experience voltage spikes or transients.
Product Parameters
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Product Name
STP76NF75
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Manufacturer
STMicroelectronics
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Continuous Drain Current (ID)
76A
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Package / Case
TO-220
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Product Type
Power MOSFET
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Voltage Rating (VDS)
75V
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RDS(ON)
0.009 ohms
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Packaging
Tube
Other distributor's price
Distributor | Part # | Mfg. | Description | Price |
---|---|---|---|---|
![]() |
STP76NF75 | STMicroelectronics | MOSFET N-CH 75V 80A TO220 |
1---$2.6400 10---$2.3720 100---$1.9066 500---$1.5665 1000---$1.2979 2000---$1.2084 5000---$1.1637 |
![]() |
STP76NF75 | STMicroelectronics | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
1000---$1.5589 2000---$1.1845 2500---$1.1727 3000---$1.1610 4000---$1.1494 5000---$1.1390 10000---$1.1275 25000---$1.1164 50000---$1.1053 |
![]() |
STP76NF75 | STMicroelectronics | MOSFET N-channel 75 V .0095 80A STripFet 2 |
1---$2.7600 10---$2.4800 25---$2.3400 100---$1.9900 500---$1.6400 1000---$1.3600 |
![]() |
STP76NF75 | STMicroelectronics | N-Channel 75 V 11 mOhm 80 A STripFET™ II Power MOSFET-TO-220 |
50---$1.3500 200---$1.3100 500---$1.2800 1250---$1.2600 2000---$1.2200 |
![]() |
STP76NF75 | STMicroelectronics | Lv Mosfet Planar & Old |Stmicroelectronics STP76NF75 |
1000---$1.2500 |
![]() |
STP76NF75 | STMicroelectronics | Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP76NF75) |
1000---$1.2660 2000---$1.2404 4000---$1.2148 6000---$1.1892 8000---$1.1637 10000---$1.1381 100000---$1.1125 |
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